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    Interesting fields

The two driving forces for the information revolution are integrated circuit technology (e.g. CPUs, DRAMs) and optical communication.  However, the two technologies have so far have never been integrated into one monolithic technology.  Si has remained the material of choice for integrated electronic circuits, while photonics is based on assembly of many discrete components.  However, if the information revolution is to be sustained, these two technologies would have to merge into one.

We believe that Si photonics, defined as photonics using Si-based materials and Si-compatible processes, can be the answer to such problems.  Thus, it is the goal of our lab to research materials and structures that can enable realization of Si photonics.

For detailed introduction and the latest results, please take time to browse through the presentation linked below.

-  Click HERE!  


    International presentations

* Nanocluster Si sensitization of Er3+ using Silicon-rich Silicon nitiride

   (Moon-Seung Yang, Jung H. Shin and Kyung Joong Kim, Spring MRS, San Francisco, USA, April 2006)

 

* Massive fabrication of nanometer-sized single crystalline grains of Er2SiO5 and its optical properties

   (Kiseok Suh, Seok-Jun Seo, Byeong-Soo Bae and Jung H. Shin Spring MRS, San Francisco, USA, April 2006)

 

* Visible photo- and Electro- luminescence from Tb-doped silicon oxy-nitiride

   (Hoon Jeong, Kwan-sik Cho, and Jung H. Shin, Spring MRS, San Francisco, USA, April 2006)

 

* Effects of silicon nanostucture evolution on Er3+ luminescence in SRSO/SiO2:Er multilayers

   (Jee Soo Chang, Moon-Seung Yang, Jung H. Shin, Kyung Joong Kim, and Dae won Moon, Spring MRS, San Francisco, USA, April 2006)

 

* Cavity-Q measurements of silica microsphere with nanocrystal silicon active layer

   (Joo Yeon Sung, Jung H. Shin, A. Tewari, and Mark Brongersma,IEEE-LEOS Group-IV Photonics , Antwerp, Belgium, Oct. 2005)

 

* Optical activation of semiconductor nanowires with rare-earth doped, sol-gel derived silica

   (Kiseok Suh, Jung H. Shin, Oun-Ho Park, Byeong-Soo Bae, and Heon-Jin Choi, E-MRS Spring, Strasbourg,     France, June 2005)

 

*  Rare-earth doping of silicon oxynitrides for carrier-mediated excitation of visible luminescence

   (Hoon Jeong, Daigil Cha, Se-Young Seo, and Jung H. Shin, E-MRS Spring, Strasbourg, France, June 2005)

 

*  470 nm LED-pumped optical waveguide amplifier based on nanocluster-Si sensitized, Er-doped silica

   (Jinku Lee, Jung H. Shin, and Namkyoo Park,  E-MRS Spring, Strasbourg, France, June 2005)

 

*  Optical Gain at 1.5 m in Nanocrystal Si-Sensitized Er-Doped Silica Waveguide Using Top-Pumping 470 nm LEDs

   (Jinku Lee, Jung H. Shin, and Namkyoo Park,  OFC Spring, USA, March 2005 )

 

*  Optical activation of Erbium by Si nanowires using sol-gel derived Er-doped silica

   (Kiseok Suh, Jung H. Shin, Oun-Ho Park, Byeong-Soo Bae, Heon-Jin Choi and Jung-Chul Lee, MRS Fall, USA, Dec.2004)

 

*  The Effect of Composition and Annealing Environment on Formation of Nanocrystal Si Memory using  ECR-PECVD-Deposited Silicon-Rich Silicon Oxide

   (Daigil Cha, Jung H. Shin, Soo-Hwan Jeong, Young Kwan Cha and In K. Yoo, MRS Fall, USA, Dec.2004)

 

*  470 nm LED-Pumped Optical Waveguide Amplifier based on Nanocrystal-Si Sensitized, Er-Doped Silica

   (Jinku Lee,  Jung. H. Shin, IEEE  LEOS First Conference on Group-IV Photonics,Hong Kong, Sep. 2004)

 

*  Nanocrystal Si sensitization of rare earths for Si microphotonics

   (Jung H. Shin, Se-young Seo, Joo-Yeon Sung, Hak-Seung Han, and Kisuk Suh, "US-KOREA" Conference, USA, August    2004)

 

*  Rare-earth doped nano-cluster silicon for silicon based photonic applications  

    (Se Young Seo, MRS, San Francisco, USA, April 2004)

 

*  Blue-green luminescence from Carbon doped Silicon-Rich Silicon Oxide  

    (Se Young Seo, MRS, San Francisco, USA, April 2004)

 

*  Visible Electoluminescence from Silicon-rich Silicon Oxide  

    (Kwan Sik Cho, MRS, San Francisco, USA, April 2004)

 

*  Er-doped Si nanocrystal/silica Microresonators using Optical Fiber  

    (Joo Yeon Sung, MRS, San Francisco, USA, April 2004)

*  Optical gain at 1.5 μm in Si-nanocrystal sensitized, Er-doped silica waveguide using top-pumping 470 nm LED

    (Jinku Lee, OFC, Los Angeles, USA, February, 2004)

*  Nanocrystal sensitization of Er in silica for Si-based optical material at 1.5 μm

    (Jung H. Shin, SPIE, San Jose, USA, January 2004)

*  Si nanostructure laser

    (Jung H. Shin, SPIE, San Jose, USA, January 2004)

*  The effect of Nd-nanocluster interaction on de-excitation of Nd-doped silicon-rich silicon oxide

    (Se Young Seo, MRS, San Francisco, USA, April 2003)

 

*  Nanocrystal sensitized, Er doped silica as the material basis for gain-providing, active Si-based microphotonics

    (Hak-Seung Han, MRS, San Francisco, USA, April 2003)

 

*  Formation of large, orientation-controlled, nearly single crystalline Si thin films on SiO2 using contact printing of rolled and annealed nickel tapes

    (Hwang Huh, MRS, San Francisco, USA, April 2003)

 

*  Active, Si-based photonic bandgap and microphotonic structures based on rare earth doped hydrogenated amorphous Si alloyed with carbon

    (Yong Seok Choi, MRS, San Francisco, USA, April 2003)

 

*  Excimer-laser enhanced formation of luminescent nanocrystal-Si/SiO2 superlattices

    (Daigil Cha, MRS, San Francisco, USA, April 2003)

*  Er-Tm co-doping of Si nanocrystals for ultra-broadband, single-source pumping optical amplifier applications  

    (Jung H. Shin, MRS, Boston, USA, December 2002)

*  Active Si-based photonic crystal devices using Erbium-doped Si/SiO2 superlattices

    (Joo Yeon Sung, MRS, Boston, USA, December 2002) 


    Facilities

ECR-PECVD:

 Base pressure:  1x10-7 torr

 Total power:  ~3 kW

 Gases used:  Ar, SiH4, N2, O2, H2, CH4

 Sputter targets:   Er, Nd, Tm, Tb, Yb, Eu, Ag

ICP:

 Base pressure:  1x10-7 torr

 Total power:  ~1 kW

 Gases used:  Ar, SiH4, N2, O2, H2, CH4

Ion beam Sputter:

 Base pressure:  1x10-7 torr

 Gases used:  Ar, N2, O2

Tube Furnace:

 Temperature:  500 - 1200 o C

 Annealing ambient:  Vacuum, Ar, N2, H2 forming gas, O2 forming gas

RTA:

 Temperature:  500 - 1100 o C

 Annealing ambient:  Vacuum, Ar, N2, H2, O2 forming gas

PL Setup:

 Excitation source:  Coherent Innova Ar laser

 Detectors:  Hammamatsu InGaAs diode, GaAs: Cs PMT

 Pre-amp:  SRS low-noise current amplifier

 Lock-in amp :  EG&G

 Cryostat :  20-300 K